Publications

Found 57 results
Author Title Type [ Year(Asc)]
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2000
Kawakami, RK., E. Johnston-Halperin, LF. Chen, M. Hanson, N. Guebels, JS. Speck, AC. Gossard, and DD. Awschalom, "(Ga, Mn) As as a digital ferromagnetic heterostructure", Applied Physics Letters, vol. 77, no. 15: AIP, pp. 2379–2381, 2000.
Lee, H., JA. Johnson, JS. Speck, and PM. Petroff, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Quantum Dots and Self-Assembled Interface Structures-Controlled ordering and positioning of InAs", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2193–2196, 2000.
Petroff, PM., W. Schoenfeld, C. Metzner, B. Gerardot, H. Lee, J. Johnson, and J. Speck, "Self-assembled quantum dot lattices and spectroscopy of single quantum dot molecules.", ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 220: AMER CHEMICAL SOC 1155 16TH ST, NW, WASHINGTON, DC 20036 USA, pp. U233–U233, 2000.
Murty, MV. Ramana, P. Fini, GB. Stephenson, C. Thompson, JA. Eastman, A. Munkholm, O. Auciello, R. Jothilingam, SP. DenBaars, and JS. Speck, "Step bunching on the vicinal GaN (0001) surface", Physical Review B, vol. 62, no. 16: APS, pp. R10661, 2000.
Zhao, L., JS. Speck, R. Rajavel, J. Jensen, D. Leonard, T. Strand, and W. Hamilton, "Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy", Journal of Electronic Materials, vol. 29, no. 6: Springer-Verlag, pp. 732–735, 2000.
1996
Yao, H., CH. Yan, HA. Jenkinson, JM. Zavada, JS. Speck, and SP. DenBaars, "Optical Dielectric Response of Gallium Nitride Studied by Variable Angle Spectroscopic Ellipsometry", MRS Online Proceedings Library Archive, vol. 449: Cambridge University Press, 1996.
1995
Keller, BP., S. Keller, D. Kapolnek, WN. Jiang, YF. Wu, H. Masui, X. Wu, B. Heying, JS. Speck, UK. Mishra, et al., "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.

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