Publications

Found 631 results
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2001
Pozina, G., JP. Bergman, B. Monemar, B. Heying, and JS. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Excitons-Radiative and Nonradiative Exciton", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 485–488, 2001.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 1)-Point defects and impurities in GaN-Capture Kinetics", Physica Status Solidi-B-Basic Research, vol. 228, no. 1: Berlin: Akademie-Verlag, 1971-, pp. 309–314, 2001.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 1)-Point defects and impurities in GaN-Capture Kinetics", Physica Status Solidi-B-Basic Research, vol. 228, no. 1: Berlin: Akademie-Verlag, 1971-, pp. 309–314, 2001.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 1)-Point defects and impurities in GaN-Capture Kinetics", Physica Status Solidi-B-Basic Research, vol. 228, no. 1: Berlin: Akademie-Verlag, 1971-, pp. 309–314, 2001.
Hansen, M., LF. Chen, JS. Speck, and SP. DenBaars, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Doping of GaN with magnesium-Observation of Mg-Rich", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 353–356, 2001.
Acikel, B., Y. Liu, A. S. Nagra, T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "Phase shifters using (Ba, Sr) TiO/sub 3/thin films on sapphire and glass substrates", Microwave Symposium Digest, 2001 IEEE MTT-S International, vol. 2: IEEE, pp. 1191–1194, 2001.
Pozina, G., JP. Bergman, B. Monemar, B. Heying, and JS. Speck, "Radiative and nonradiative exciton lifetimes in GaN grown by molecular beam epitaxy", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 485–488, 2001.
Böttcher, T., S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, and JS. Speck, "The role of high-temperature island coalescence in the development of stresses in GaN films", Applied Physics Letters, vol. 78, no. 14: AIP, pp. 1976–1978, 2001.
Böttcher, T., S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, and JS. Speck, "The role of high-temperature island coalescence in the development of stresses in GaN films", Applied Physics Letters, vol. 78, no. 14: AIP, pp. 1976–1978, 2001.
Lee, H., JA. Johnson, MY. He, JS. Speck, and PM. Petroff, "Strain-engineered self-assembled semiconductor quantum dot lattices", Applied Physics Letters, vol. 78, no. 1: AIP, pp. 105–107, 2001.
Acikel, B., P. J. Hansen, T. R. Taylor, A. S. Nagra, J. S. Speck, and R. A. York, "Tunable strontium titanate thin films for microwave devices", Integrated Ferroelectrics, vol. 39, pp. 291-298, 2001.
2000
Saxler, A., P. Debray, R. Perrin, S. Elhamri, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Characterization of an AlGaN/GaN two-dimensional electron gas structure", Journal of Applied Physics, vol. 87, no. 1: AIP, pp. 369–374, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Characterization of an AlGaN/GaN two-dimensional electron gas structure", Journal of Applied Physics, vol. 87, no. 1: AIP, pp. 369–374, 2000.
Heying, B., R. Averbeck, LF. Chen, E. Haus, H. Riechert, and JS. Speck, "Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 88, no. 4: AIP, pp. 1855–1860, 2000.
Heying, B., R. Averbeck, LF. Chen, E. Haus, H. Riechert, and JS. Speck, "Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 88, no. 4: AIP, pp. 1855–1860, 2000.
Hierro, A., D. Kwon, SA. Ringel, M. Hansen, UK. Mishra, SP. DenBaars, and JS. Speck, "Deep levels in n-type Schottky and p+-n homojunction GaN diodes", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 922–928, 2000.
Hierro, A., D. Kwon, SA. Ringel, M. Hansen, UK. Mishra, SP. DenBaars, and JS. Speck, "Deep levels in n-type Schottky and p+-n homojunction GaN diodes", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 922–928, 2000.
Hansen, M., AC. Abare, P. Kozodoy, TM. Katona, MD. Craven, JS. Speck, UK. Mishra, LA. Coldren, and SP. DenBaars, Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes [Multiple Quantum Wells]: Univ. of California, Santa Barbara, CA (US), 2000.
Hansen, M., A. C. Abare, P. Kozodoy, T. M. Katona, M. D. Craven, J. S. Speck, U. K. Mishra, L. A. Coldren, and S. P. DenBaars, "Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 14–19, 2000.
Elsass, CR., T. Mates, B. Heying, C. Poblenz, P. Fini, PM. Petroff, SP. DenBaars, and JS. Speck, "Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 20: AIP, pp. 3167–3169, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Electrical transport of an AlGaN/GaN two-dimensional electron gas", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 619–625, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Electrical transport of an AlGaN/GaN two-dimensional electron gas", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 619–625, 2000.
Elsass, C. R., I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, et al., "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
Elsass, C. R., I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, et al., "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
Kawakami, RK., E. Johnston-Halperin, LF. Chen, M. Hanson, N. Guebels, JS. Speck, AC. Gossard, and DD. Awschalom, "(Ga, Mn) As as a digital ferromagnetic heterostructure", Applied Physics Letters, vol. 77, no. 15: AIP, pp. 2379–2381, 2000.

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