Publications

Found 3 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Last Name is B and Author is Bryant, Benjamin N  [Clear All Filters]
2013
Bryant, B. N., E. C. Young, F. Wu, K. Fujito, S. Nakamura, and J. S. Speck, "Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy", Applied Physics Express, vol. 6, no. 11: IOP Publishing, pp. 115502, 2013.
Bryant, B. N., A. Hirai, E. C. Young, S. Nakamura, and J. S. Speck, "Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy", Journal of Crystal Growth, vol. 369: Elsevier, pp. 14–20, 2013.
2011
Bryant, B. N., D. S. Kamber, F. Wu, S. Nakamura, and J. S. Speck, "Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy", physica status solidi (c), vol. 8, no. 5: Wiley Online Library, pp. 1463–1466, 2011.