Publications
Found 700 results
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, "(Ga, Mn) As as a digital ferromagnetic heterostructure", Applied Physics Letters, vol. 77, no. 15: AIP, pp. 2379–2381, 2000.
, "Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: AIP, pp. 718–720, 2000.
, "Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: AIP, pp. 718–720, 2000.
, "Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes", Applied Physics Letters, vol. 76, no. 21: AIP, pp. 3064–3066, 2000.
, "Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure", MRS Online Proceedings Library Archive, vol. 639: Cambridge University Press, 2000.
, "Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure", Journal of Applied Physics, vol. 88, no. 11: AIP, pp. 6583–6588, 2000.
, "Strain relaxation in InGaAs lattice engineered substrates", Journal of Electronic Materials, vol. 29, no. 7: Springer-Verlag, pp. 944–949, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: New York [etc.] American Institute of Physics., pp. 718–720, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: New York [etc.] American Institute of Physics., pp. 718–720, 2000.
, "Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers", Applied Physics Letters, vol. 77, no. 24: AIP, pp. 3998–4000, 2000.
, "1. Electronic and Optoelectronic Devices-1.1 Laser diodes-Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes", Physica Status Solidi-A-Applied Research, vol. 176, no. 1: Berlin: Akademie-Verlag,[1970]-c2004., pp. 59–62, 1999.
, "1. Electronic and Optoelectronic Devices-1.1 Laser diodes-Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes", Physica Status Solidi-A-Applied Research, vol. 176, no. 1: Berlin: Akademie-Verlag,[1970]-c2004., pp. 59–62, 1999.
, "Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride", Applied physics letters, vol. 74, no. 14: AIP, pp. 2035–2037, 1999.
, "Chapter 12: Material Growth and Characterization (Wide Gap and Nitride)-Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapour", Institute of Physics Conference Series, vol. 162: Bristol [England]; Boston: Adam Hilger, Ltd., c1985-, pp. 681–686, 1999.
, "Chapter 5: Field Effect Transistors (FETs and HEMTs)-First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)", Institute of Physics Conference Series, vol. 162: Bristol [England]; Boston: Adam Hilger, Ltd., c1985-, pp. 177–184, 1999.
, "Electrical characterization of BaTiO 3 heteroepitaxial thin films by hydrothermal synthesis", Journal of materials research, vol. 14, no. 8: Cambridge University Press, pp. 3330–3339, 1999.
, "Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth", Applied physics letters, vol. 74, no. 10: AIP, pp. 1460–1462, 1999.
, "Extended defect reduction in GaN laterally overgrown on Si (111)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 833–836, 1999.
, "Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process", MRS Internet Journal of Nitride Semiconductor Research, vol. 4, pp. 453–458, 1999.
, "First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 177–184, 1999.
, "High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 74, no. 23: AIP, pp. 3528–3530, 1999.
, "Optical properties of InGaN quantum wells", Materials Science and Engineering: B, vol. 59, no. 1-3: Elsevier, pp. 298–306, 1999.
, "Optical properties of InGaN quantum wells", Materials Science and Engineering: B, vol. 59, no. 1-3: Elsevier, pp. 298–306, 1999.
, "Strain relaxation in InxGa1-xAs lattice engineered substrates", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1050–1051, 1999.
, "Strain relaxation of In x Ga 1- x As during lateral oxidation of underlying AlAs layers", Applied physics letters, vol. 75, no. 15: AIP, pp. 2253–2255, 1999.