Publications

Found 522 results
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1998
Chavarkar, PM., L. Zhao, S. Keller, KA. Black, E. Hu, J. Speck, and U. Mishra, "Lattice Engineering Using Lateral Oxidation of Alas: an Approach to Generate Substrates With New Lattice Constants", MRS Online Proceedings Library Archive, vol. 535: Cambridge University Press, 1998.
Abare, AC., MP. Mack, M. Hansen, JS. Speck, LA. Coldren, SP. DenBaars, GA. Meyer, SL. Lehew, and GA. Cooper, "Measurement of gain current relations for InGaN multiple quantum wells", Applied physics letters, vol. 73, no. 26: AIP, pp. 3887–3889, 1998.
Abare, AC., MP. Mack, M. Hansen, JS. Speck, LA. Coldren, SP. DenBaars, GA. Meyer, SL. Lehew, and GA. Cooper, "Measurement of gain current relations for InGaN multiple quantum wells", Applied physics letters, vol. 73, no. 26: AIP, pp. 3887–3889, 1998.
Chien, AT., L. Zhao, M. Colic, JS. Speck, and FF. Lange, "Microstructural development of BaTiO 3 heteroepitaxial thin films by hydrothermal synthesis", Journal of materials research, vol. 13, no. 3: Cambridge University Press, pp. 649–659, 1998.
Chien, AT., L. Zhao, M. Colic, JS. Speck, and FF. Lange, "Microstructural development of BaTiO 3 heteroepitaxial thin films by hydrothermal synthesis", Journal of materials research, vol. 13, no. 3: Cambridge University Press, pp. 649–659, 1998.
DenBaars, S. P., J. S. Speck, C. H. Church, R. G. Wilson, and J. M. Zavada, Miniature self-pumped monolithically integrated solid state laser, 1998.
Keller, S., F. Cabané, MS. Minsky, X. Hui Wu, MP. Mack, J. S. Speck, E. Hu, LA. Coldren, U. K. Mishra, and S. P. DenBaars, "MOCVD growth and properties of InGaN/GaN multi-quantum wells", Materials Science Forum, vol. 264: Trans Tech Publications, pp. 1157–1160, 1998.
Keller, S., F. Cabané, MS. Minsky, X. Hui Wu, MP. Mack, J. S. Speck, E. Hu, LA. Coldren, U. K. Mishra, and S. P. DenBaars, "MOCVD growth and properties of InGaN/GaN multi-quantum wells", Materials Science Forum, vol. 264: Trans Tech Publications, pp. 1157–1160, 1998.
Young, DK., S. Keller, EL. Hu, J. Speck, PA. Crowell, and DD. Awschalom, "Near Field Spectroscopy of InGaN Single and Multiple Quantum Well Structures", APS March Meeting Abstracts, 1998.
Mack, MP., DK. Young, AC. Abare, M. Hansen, LA. Coldren, JS. Speck, EL. Hu, DD. Awschalom, and SP. DenBaars, "Observation of near field modal emission in InGaN multi-quantum well laser diodes by near field scanning optical microscopy", Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International: IEEE, pp. 9–10, 1998.
1999
Hansen, M., AC. Abare, P. Kozodoy, TM. Katona, MD. Craven, JS. Speck, UK. Mishra, LA. Coldren, and SP. DenBaars, "1. Electronic and Optoelectronic Devices-1.1 Laser diodes-Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes", Physica Status Solidi-A-Applied Research, vol. 176, no. 1: Berlin: Akademie-Verlag,[1970]-c2004., pp. 59–62, 1999.
Hansen, M., AC. Abare, P. Kozodoy, TM. Katona, MD. Craven, JS. Speck, UK. Mishra, LA. Coldren, and SP. DenBaars, "1. Electronic and Optoelectronic Devices-1.1 Laser diodes-Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes", Physica Status Solidi-A-Applied Research, vol. 176, no. 1: Berlin: Akademie-Verlag,[1970]-c2004., pp. 59–62, 1999.
Marchand, H., JP. Ibbetson, PT. Fini, S. Chichibu, SJ. Rosner, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Chapter 12: Material Growth and Characterization (Wide Gap and Nitride)-Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapour", Institute of Physics Conference Series, vol. 162: Bristol [England]; Boston: Adam Hilger, Ltd., c1985-, pp. 681–686, 1999.
Abare, AC., M. Hansen, JS. Speck, LA. Coldren, and SP. DenBaars, "Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings", Device Research Conference Digest, 1999 57th Annual: IEEE, pp. 198–199, 1999.
Chien, AT., X. Xu, JH. Kim, J. Sachleben, JS. Speck, and FF. Lange, "Electrical characterization of BaTiO 3 heteroepitaxial thin films by hydrothermal synthesis", Journal of materials research, vol. 14, no. 8: Cambridge University Press, pp. 3330–3339, 1999.
Abare, AC., M. Hansen, JS. Speck, SP. DenBaars, and LA. Coldren, "Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings", Electronics Letters, vol. 35, no. 18: IET, pp. 1559–1560, 1999.
Chichibu, SF., H. Marchand, MS. Minsky, S. Keller, PT. Fini, JP. Ibbetson, SB. Fleischer, JS. Speck, JE. Bowers, E. Hu, et al., "Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth", Applied physics letters, vol. 74, no. 10: AIP, pp. 1460–1462, 1999.
Chichibu, SF., AC. Abare, MP. Mack, MS. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, SB. Fleischer, S. Keller, JS. Speck, et al., "Optical properties of InGaN quantum wells", Materials Science and Engineering: B, vol. 59, no. 1-3: Elsevier, pp. 298–306, 1999.
Chichibu, SF., AC. Abare, MP. Mack, MS. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, SB. Fleischer, S. Keller, JS. Speck, et al., "Optical properties of InGaN quantum wells", Materials Science and Engineering: B, vol. 59, no. 1-3: Elsevier, pp. 298–306, 1999.
Chavarkar, P. M., L. Zhao, S. Keller, A. Fisher, J. S. Speck, and U. K. Mishra, "Strain relaxation in InxGa1-xAs lattice engineered substrates", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1050–1051, 1999.
Chavarkar, P., L. Zhao, S. Keller, A. Fisher, C. Zheng, JS. Speck, and UK. Mishra, "Strain relaxation of In x Ga 1- x As during lateral oxidation of underlying AlAs layers", Applied physics letters, vol. 75, no. 15: AIP, pp. 2253–2255, 1999.
Marchand, H., JP. Ibbetson, PT. Fini, S. Chichibu, SJ. Rosner, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapor deposition", COMPOUND SEMICONDUCTORS 1998, no. 162: IOP PUBLISHING LTD DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND, pp. 681–686, 1999.
Chien, AT., J. Sachleben, JH. Kim, JS. Speck, and FF. Lange, "Synthesis and characterization of PbTiO 3 powders and heteroepitaxial thin films by hydrothermal synthesis", Journal of materials research, vol. 14, no. 8: Cambridge University Press, pp. 3303–3311, 1999.
2000
Heying, B., R. Averbeck, LF. Chen, E. Haus, H. Riechert, and JS. Speck, "Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 88, no. 4: AIP, pp. 1855–1860, 2000.
Hansen, M., AC. Abare, P. Kozodoy, TM. Katona, MD. Craven, JS. Speck, UK. Mishra, LA. Coldren, and SP. DenBaars, Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes [Multiple Quantum Wells]: Univ. of California, Santa Barbara, CA (US), 2000.

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