Publications

Found 1602 results
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2007
Yamada, H., K. Iso, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Impact of substrate miscut on the characteristic of m-plane InGaN/GaN light emitting diodes", Japanese Journal of Applied Physics, vol. 46, no. 12L: IOP Publishing, pp. L1117, 2007.
Chichibu, SF., T. Onuma, T. Hashimoto, K. Fujito, F. Wu, JS. Speck, and S. Nakamura, "Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method", Applied Physics Letters, vol. 91, no. 25: AIP, pp. 251911, 2007.
Kim, K-C., M. C. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 3: Wiley Online Library, pp. 125–127, 2007.
Koblmüller, G., S. Fernández-Garrido, E. Calleja, and JS. Speck, "In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN", Applied Physics Letters, vol. 91, no. 16: AIP, pp. 161904, 2007.
Keller, S., NA. Fichtenbaum, F. Wu, D. Brown, A. Rosales, SP. DenBaars, JS. Speck, and UK. Mishra, "Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 102, no. 8: AIP, pp. 083546, 2007.
Giri, N. Kumar, A. Kumar Singh, SB. Rai, J-Y. Kim, S. Cho, S-J. Lim, J. Yoo, G. Bum Kim, K-S. Kim, J. Lee, et al., "LASERS, OPTICS, AND OPTOELECTRONICS", J. Appl. Phys, vol. 101, no. 3, 2007.
Kamber, D. S., Y. Wu, E. Letts, S. P. DenBaars, J. S. Speck, S. Nakamura, and S. A. Newman, "Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy", Applied physics letters, vol. 90, no. 12: AIP, pp. 122116, 2007.
Wong, M. Hoi, Y. Pei, T. Palacios, L. Shen, A. Chakraborty, L. S. McCarthy, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth", Applied Physics Letters, vol. 91, no. 23: AIP, pp. 232103, 2007.
Kröger, R., T. Paskova, A. Rosenauer, D. Hommel, B. Monemar, P. Fini, B. Haskell, J. Speck, and S. Nakamura, "On the Mechanism of Dislocation and Stacking Fault Formation in a-plane GaN Films Grown by Hydride Vapor Phase Epitaxy", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 341–342, 2007.
Fichtenbaum, N. A., C. J. Neufeld, C. Schaake, Y. Wu, M. Hoi Wong, M. Grundmann, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Metalorganic chemical vapor deposition regrowth of InGaN and GaN on N-polar pillar and stripe nanostructures", Japanese journal of applied physics, vol. 46, no. 3L: IOP Publishing, pp. L230, 2007.
Fichtenbaum, NA., CJ. Neufeld, C. Schaake, Y. Wu, MH. Wong, M. Grundmann, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures", physica status solidi (b), vol. 244, no. 6: Wiley Online Library, pp. 1802–1805, 2007.
Wong, M. Hoi, S. Rajan, RM. Chu, T. Palacios, C-S. Suh, L. S. McCarthy, S. Keller, J. S. Speck, and U. K. Mishra, "N-face high electron mobility transistors with a GaN-spacer", physica status solidi (a), vol. 204, no. 6: Wiley Online Library, pp. 2049–2053, 2007.
Feezell, D., S. Nakamura, S. DenBaars, and J. Speck, "Nonpolar gallium nitride laser diodes are the next new blue", Laser focus world, vol. 43, no. 10: Pennwell, 2007.
Rajan, S., A. Chini, M. Hoi Wong, J. S. Speck, and U. K. Mishra, "N-polar Ga N/ Al Ga N/ Ga N high electron mobility transistors", Journal of Applied Physics, vol. 102, no. 4: AIP, pp. 044501, 2007.
Rajan, S., E. Hsieh, M. Hoi Wong, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-polar GaN Electronics", Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on: IEEE, pp. 368–368, 2007.
Keller, S., NA. Fichtenbaum, C. Schaake, CJ. Neufeld, A. David, E. Matioli, Y. Wu, SP. DenBaars, JS. Speck, C. Weisbuch, et al., "Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells", physica status solidi (b), vol. 244, no. 6: Wiley Online Library, pp. 1797–1801, 2007.
Onuma, T., T. Koyama, A. Chakraborty, M. McLaurin, BA. Haskell, PT. Fini, S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, et al., "Papers from the 34th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces-Complex Oxides-Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1-xN/GaN multiple", Journal of Vacuum Science and Technology-Section B, vol. 25, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 1524–1528, 2007.
Fujii, K., Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, et al., "Photoelectrochemical properties of nonpolar and semipolar GaN", Japanese Journal of Applied Physics, vol. 46, no. 10R: IOP Publishing, pp. 6573, 2007.
Behn, U., P. Misra, H. T. Grahn, B. Imer, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy", physica status solidi (a), vol. 204, no. 1: Wiley Online Library, pp. 299–303, 2007.
Poblenz, C., A. L. Corrion, F. Recht, C. Soo Suh, R. Chu, L. Shen, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz", IEEE Electron Device Letters, vol. 28, no. 11: IEEE, pp. 945–947, 2007.
Haskell, BA., S. Nakamura, SP. DenBaars, and JS. Speck, "Progress in the growth of nonpolar gallium nitride", physica status solidi (b), vol. 244, no. 8: Wiley Online Library, pp. 2847–2858, 2007.
McLaurin, M., and J. S. Speck, "p-type conduction in stacking-fault-free m-plane GaN", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 3: Wiley Online Library, pp. 110–112, 2007.
Onuma, T., T. Koyama, A. Chakraborty, M. McLaurin, BA. Haskell, PT. Fini, S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, et al., "Radiative and nonradiative lifetimes in nonpolar m-plane In x Ga 1- x N/ Ga N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 25, no. 4: AVS, pp. 1524–1528, 2007.
Feezell, D. F., S. P. DenBaars, J. S. Speck, and S. Nakamura, "Recent performance of nonpolar and semipolar GaN-based light emitting diodes and laser diodes", Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE: IEEE, pp. 1–4, 2007.
Nakamura, S., S. P. DenBaars, J. S. Speck, M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, H. Sato, et al., "Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, Oct, 2007.

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