Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy

TitleOver 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy
Publication TypeJournal Article
Year of Publication2020
AuthorsFarzana, E., J. Wang, M. Monavarian, T. Itoh, K. S. Qwah, Z. J. Biegler, K. F. Jorgensen, and J. S. Speck
JournalIEEE Electron Device Letters
Volume41
Pagination1806-1809
DOI10.1109/LED.2020.3032387