Schottky barrier height of Ni to β-(AlxGa1- x) 2O3 with different compositions grown by plasma-assisted molecular beam epitaxy

TitleSchottky barrier height of Ni to β-(AlxGa1- x) 2O3 with different compositions grown by plasma-assisted molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2017
AuthorsAhmadi, E., Y. Oshima, F. Wu, and J. S. Speck
JournalSemiconductor Science and Technology
Volume32
Pagination035004