| Title | Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016) |
| Publication Type | Journal Article |
| Year of Publication | 2016 |
| Authors | Hestroffer, K., C. Lund, H. Li, S. Keller, J. S. Speck, and U. K. Mishra |
| Journal | physica status solidi (b) |
| Volume | 253 |
| Pagination | 792–792 |