| Title | Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells |
| Publication Type | Journal Article |
| Year of Publication | 2015 |
| Authors | Hestroffer, K., F. Wu, H. Li, C. Lund, S. Keller, J. S. Speck, and U. K. Mishra |
| Journal | Semiconductor Science and Technology |
| Volume | 30 |
| Pagination | 105015 |