Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition

TitleElectrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition
Publication TypeJournal Article
Year of Publication2016
AuthorsLiu, X., CM. Jackson, F. Wu, B. Mazumder, R. Yeluri, J. Kim, S. Keller, AR. Arehart, SA. Ringel, JS. Speck, and others
JournalJournal of Applied Physics
Volume119
Pagination015303