| Title | Physical mechanisms affecting the reliability of GaN-based high electron mobility transistors |
| Publication Type | Journal Article |
| Year of Publication | 2015 |
| Authors | Schrimpf, RD., DM. Fleetwood, ST. Pantelides, YS. Puzyrev, S. Mukherjee, RA. Reed, JS. Speck, and UK. Mishra |
| Journal | MRS Online Proceedings Library Archive |
| Volume | 1792 |