| Title | AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy |
| Publication Type | Journal Article |
| Year of Publication | 2012 |
| Authors | Raman, A., C. A. Hurni, J. S. Speck, and U. K. Mishra |
| Journal | physica status solidi (a) |
| Volume | 209 |
| Pagination | 216–220 |