High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

TitleHigh-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels
Publication TypeJournal Article
Year of Publication2010
AuthorsKoblmüller, G., RM. Chu, A. Raman, UK. Mishra, and JS. Speck
JournalJournal of Applied Physics
Volume107
Pagination043527