| Title | AlGaN channel high electron mobility transistors: Device performance and power-switching figure of merit |
| Publication Type | Journal Article |
| Year of Publication | 2008 |
| Authors | Raman, A., S. Dasgupta, S. Rajan, J. S. Speck, and U. K. Mishra |
| Journal | Japanese Journal of Applied Physics |
| Volume | 47 |
| Pagination | 3359 |