| Title | Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy |
| Publication Type | Journal Article |
| Year of Publication | 2002 |
| Authors | Hierro, A., AR. Arehart, B. Heying, M. Hansen, UK. Mishra, SP. DenBaars, JS. Speck, and SA. Ringel |
| Journal | Applied physics letters |
| Volume | 80 |
| Pagination | 805–807 |