| Title | Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope |
| Publication Type | Journal Article |
| Year of Publication | 2002 |
| Authors | Miller, EJ., DM. Schaadt, ET. Yu, C. Poblenz, C. Elsass, and JS. Speck |
| Journal | Journal of applied physics |
| Volume | 91 |
| Pagination | 9821–9826 |