| Title | Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors |
| Publication Type | Journal Article |
| Year of Publication | 2000 |
| Authors | Ibbetson, J. Paul, PT. Fini, KD. Ness, SP. DenBaars, JS. Speck, and UK. Mishra |
| Journal | Applied Physics Letters |
| Volume | 77 |
| Pagination | 250–252 |