Biography

Tsung-Yin Tsai is a Postdoctoral Associate at UC Santa Barbara, working under the guidance of Professor James S. Speck. He earned his Ph.D. from the Graduate Institute of Photonics and Optoelectronics at National Taiwan University.

Tsai's current research focuses on III-nitride-based long wavelength light emitting diodes and utilizing numerical simulations to explore the impact of natural alloy disorder on the physical properties of semiconductors. Previously, Tsai contributed significantly to the field by developing numerical tools for electronic band structure calculations and device modeling. His work encompassed various areas, including InAs/InAsSb superlattice photoconductors, MoxW1-xS2 alloys, Graphene/SnS2 photodetectors, and GaN-based high electron mobility transistors.