Biography

Post-doctoral researcher working on nanometer scale investigation of nitride semiconductors for the improvement and development of optoelectronic devices.

Publications

1.  Atomic Arrangement at ZnTe/CdSe Interfaces Determined by High Resolution Scanning Transmission Electron Microscopy and Atom Probe Tomography.Bonef, B.; Gérard, L.; Rouvière, J.-L.; Grenier, A.; Jouneau, P.-H.; Bellet-Amalric, E.; Mariette, H.; André, R.; Bougerol, C. Appl. Phys. Lett. 2015, 106 (5), 051904.

2. Interfacial Chemistry in a ZnTe/CdSe Superlattice Studied by Atom Probe Tomography and Transmission Electron Microscopy Strain Measurements. Bonef, B.; Haas, B.; Rouvière, J.-L.; André, R.; Bougerol, C.; Grenier, A.; Jouneau, P.-H.; Zuo, J.-M. J. Microsc. 2016, 262 (2), 178–182.

3. High Indium Content Homogenous InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy. Kyle, E. C. H.; Kaun, S. W.; Wu, F.; Bonef, B.; Speck, J. S. J. Cryst. Growth 2016, 454, 164–172.

4. Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-Ray Spectroscopy and Atom Probe Tomography. Bonef, B.; Lopez-Haro, M.; Amichi, L.; Beeler, M.; Grenier, A.; Robin, E.; Jouneau, P.-H.; Mollard, N.; Mouton, I.; Monroy, E.; et al. Nanoscale Res. Lett. 2016, 11 (1), 461.

5. Atom Probe Tomography of Nitride Semiconductors. Rigutti, L.; Bonef, B.; Speck, J.; Tang, F.; Oliver, R. A. Scr. Mater. 2018, 148, 75–81.

6. C. Localization Landscape Theory of Disorder in Semiconductors. II. Urbach Tails of Disordered Quantum Well Layers. Piccardo, M.; Li, C.-K.; Wu, Y.-R.; Speck, J. S.; Bonef, B.; Farrell, R. M.; Filoche, M.; Martinelli, L.; Peretti, J.; Weisbuch, Phys. Rev. B 2017, 95 (14), 144205.

7. Indium Segregation in N-Polar InGaN Quantum Wells Evidenced by Energy Dispersive X-Ray Spectroscopy and Atom Probe Tomography. Bonef, B.; Catalano, M.; Lund, C.; Denbaars, S. P.; Nakamura, S.; Mishra, U. K.; Kim, M. J.; Keller, S. Appl. Phys. Lett. 2017, 110 (14), 143101.