Localized state effects in polymer thin film transistors

TitleLocalized state effects in polymer thin film transistors
Publication TypeJournal Article
Year of Publication2004
AuthorsR.A. Street, A. Salleo, M.L. Chabinyc, and K.E. Paul
JournalJOURNAL OF NON-CRYSTALLINE SOLIDS
Volume338
Pagination607-611
Date PublishedJUN 15
ISSN0022-3093
AbstractPolymer semiconductors are of increasing interest for thin film transistors (TFT) and active matrix arrays, since their mobility is up to similar to0.1 cm(2)/V s, and they offer simple fabrication by solution-based printing. To understand the role of disorder and localized states in the polymers, we measure p-channel polythiophene and polyfluorene TFTs, using both spin-coated and jet-printed films, and infer localized states properties from the TFT characteristics. Bias stress effects occur in the polymer TFTs, which exhibit a threshold shift without significant change in mobility. Holes are removed from the channel at a rate proportional to the square of their concentration, suggesting the slow formation of hole bipolarons. (C) 2004 Elsevier B.V. All rights reserved.
DOI10.1016/j.jnoncrysol.2004.03.052