Short channel effects in regioregular poly(thiophene) thin film transistors

TitleShort channel effects in regioregular poly(thiophene) thin film transistors
Publication TypeJournal Article
Year of Publication2004
AuthorsM.L. Chabinyc, JP Lu, R.A. Street, Y.L. Wu, P. Liu, and B.S. Ong
Date PublishedAUG 15
AbstractThe effects of the physical channel length on the current-voltage characteristics of thin film transistors (TFTs) made with poly[5,5(')-bis(3-dodecyl-2-thienyl)-2,2(')-bithiophene] were examined. Coplanar transistors with fully patterned electrodes on insulating substrates and with a common gate structure on thermal oxide were fabricated. The output characteristics of TFTs with channel lengths shorter than 10 mum showed the presence of a parasitic contact resistance and the lack of current saturation. The origin of these nonidealities was examined by the application of models that included self-heating effects and breakdown of the channel region at high applied biases. The analysis suggests that carriers can break away from the channel at high bias voltages and flow through a bulk region of the semiconducting film leading to higher currents than otherwise expected. (C) 2004 American Institute of Physics.