| Title | Comparing the kinetics of bias stress in organic field-effect transistors with different dielectric interfaces |
| Publication Type | Journal Article |
| Year of Publication | 2006 |
| Authors | T.N. Ng, John A. Marohn, and M.L. Chabinyc |
| Journal | JOURNAL OF APPLIED PHYSICS |
| Volume | 100 |
| Pagination | 084505 |
| Date Published | OCT 15 |
| ISSN | 0021-8979 |
| Abstract | The kinetics of trap formation and dissociation is investigated in organic field-effect transistors to understand how the dielectric surface affects device stability. Devices with surface treatment of octadecyl-trichlorosilane (OTS) show faster trapping rates than an untreated oxide dielectric. Trap release is also quicker from the OTS interface compared to the untreated interface, thus implying that traps have lower barriers in the OTS interface than in the untreated interface. Images of trap distribution are obtained by electric force microscopy for polyfluorenethiophene transistors, but the traps in polythiophene transistors could not be imaged due to shielding charges. (c) 2006 American Institute of Physics. |
| DOI | 10.1063/1.2358410 |
