Bias stress effects in organic thin film transistors

TitleBias stress effects in organic thin film transistors
Publication TypeConference Paper
Year of Publication2007
AuthorsT.N. Ng, M.L. Chabinyc, R.A. Street, and A. Salleo
Conference Name2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL
PublisherIEEE
Conference Location345 E 47TH ST, NEW YORK, NY 10017 USA
ISBN Number978-1-4244-0918-1
Keywordsbias stress, charge trap, field-effect transistors, organic semiconductors
AbstractDevice instability and limited lifetime have been the hurdles to commercialization of organic electronics. Through electrical characterizations and microscopy techniques, much progress has been made in understanding gate bias stress that limits the stability of organic field-effect transistors. The kinetics and mechanisms of charge trapping in organic semiconductors are examined to explain the bias-stress behaviors. The external processing factors, such as dielectric treatments and environmental conditions that affect the severity of bias stress, are also investigated to enable controllable and reproducible device fabrication.
DOI10.1109/RELPHY.2007.369899