Gate bias stress effects due to polymer gate dielectrics in organic thin-film transistors

TitleGate bias stress effects due to polymer gate dielectrics in organic thin-film transistors
Publication TypeJournal Article
Year of Publication2008
AuthorsT.N. Ng, Juergen H. Daniel, S. Sambandan, A.C. Arias, M.L. Chabinyc, and R.A. Street
JournalJOURNAL OF APPLIED PHYSICS
Volume103
Pagination044506
Date PublishedFEB 15
ISSN0021-8979
AbstractThe operational stability of organic thin-film transistors (OTFTs) comprising bilayer polymer dielectric of poly(methylsilsesquioxane) (pMSSQ) and either the epoxy resin SU-8 or poly(4-vinyl phenol) was examined. Although not in direct contact with the semiconductor materials, the bottom dielectric layer did affect OTFT stability through water ion movement or charge injection inside the bottom dielectrics. In the comparison between our best polymer dielectric pMSSQ/SU-8 to the silicon oxide dielectric, the result emphasized that, at equal initial charge concentration, polymer dielectrics did not alleviate threshold-voltage shift but did maintain more stable current due to the lower gate capacitance than silicon oxide. (C) 2008 American Institute of Physics.
DOI10.1063/1.2884535