Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

TitleIonic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide
Publication TypeJournal Article
Year of Publication2013
AuthorsS.L. Bubel, S.Y. Meyer, F. Kunze, and M.L. Chabinyc
JournalAPPLIED PHYSICS LETTERS
Volume103
Pagination152102
Date PublishedOCT 7
ISSN0003-6951
AbstractIn low-temperature solution processed amorphous zinc oxide (a-ZnO) thin films, we show the thin film transistor (TFT) characteristics for the trap-filled limit (TFL), when the quasi Fermi energy exceeds the conduction band edge and all tail-states are filled. In order to apply gate fields that are high enough to reach the TFL, we use an ionic liquid tape gate. Performing capacitance voltage measurements to determine the accumulated charge during TFT operation, we find the TFL at biases higher than predicted by the electronic structure of crystalline ZnO. We conclude that the density of states in the conduction band of a-ZnO is higher than in its crystalline state. Furthermore, we find no indication of percolative transport in the conduction band but trap assisted transport in the tail-states of the band. (C) 2013 AIP Publishing LLC.
DOI10.1063/1.4824022