Stability of Ionic Liquid-Gated Metal Oxides and Transistors

TitleStability of Ionic Liquid-Gated Metal Oxides and Transistors
Publication TypeJournal Article
Year of Publication2014
AuthorsS.L. Bubel, S.Y. Meyer, and M.L. Chabinyc
JournalIEEE TRANSACTIONS ON ELECTRON DEVICES
Volume61
Pagination1561-1566
Date PublishedMAY
ISSN0018-9383
KeywordsDegradation, electrolyte, electronic double layer, gold leaching, imidazolium, ion gel, ionic liquid (IL), stains, tetracyanoborate (TCB), turbidity, zinc oxide
AbstractIonic liquids (ILs) and their gels are considered for low-voltage and flexible devices due to their ease of processing, freedom in device design, and the realization of high electrostatic fields at low bias voltages. If IL-gated devices are operated at electrochemically stable biases of their individual compounds, they are believed to be reliable. However, small instabilities at interfaces to amorphous oxide semiconductors can lead to secondary instabilities and even the decomposition of gold electrodes, in this paper shown for the case of cyano containing anions.
DOI10.1109/TED.2014.2308141