Publications

Found 1578 results
Author [ Title(Desc)] Type Year
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A
Smorchkova, IP., L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
Da Lin, Y-., H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck, Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes, jun # " 24", 2014.
Bryant, B. N., D. S. Kamber, F. Wu, S. Nakamura, and J. S. Speck, "Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy", physica status solidi (c), vol. 8, no. 5: Wiley Online Library, pp. 1463–1466, 2011.
Fireman, M. N., and J. S. Speck, "Ammonia Molecular Beam Epitaxy of III‐Nitrides", Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics: John Wiley & Sons Ltd, 2019.
Hashimoto, T., F. Wu, J. S. Speck, and S. Nakamura, "Ammonothermal growth of bulk GaN", Journal of Crystal Growth, vol. 310, no. 17: Elsevier, pp. 3907–3910, 2008.
Hashimoto, T., J. S. Speck, and S. Nakamura, Ammonothermal Growth of Bulk GaN for Extended Time, 2007.
Hashimoto, T., K. Fujito, M. Saito, J. S. Speck, and S. Nakamura, "Ammonothermal growth of GaN on an over-1-inch seed crystal", Japanese journal of applied physics, vol. 44, no. 12L: IOP Publishing, pp. L1570, 2005.
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia", MRS Online Proceedings Library Archive, vol. 831: Cambridge University Press, 2004.
Pimputkar, S., J. S. Speck, S. Nakamura, and S-ichiro. Kawabata, Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other, 2015.
Poblenz, C., J. S. Speck, and D. S. Kamber, Ammonothermal method for growth of bulk gallium nitride, 2013.
Zhang, H., EJ. Miller, ET. Yu, C. Poblenz, and JS. Speck, "Analysis of interface electronic structure in In x Ga 1- x N/GaN heterostructures", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 4: AVS, pp. 2169–2174, 2004.
Steinbeck, J., G. Braunstein, J. Speck, MS. Dresselhaus, CY. Huang, AM. Malvezzi, and N. Bloembergen, "Analysis of picosecond pulsed laser melted graphite", MRS Online Proceedings Library Archive, vol. 74: Cambridge University Press, 1986.
Miller, EJ., ET. Yu, P. Waltereit, and JS. Speck, "Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy", Applied physics letters, vol. 84, no. 4: AIP, pp. 535–537, 2004.
Foronda, H. M., B. Mazumder, E. C. Young, M. A. Laurent, Y. Li, S. P. DenBaars, and J. S. Speck, "Analysis of Vegardís law for lattice matching InxAl1- xN to GaN by metalorganic chemical vapor deposition", Journal of Crystal Growth, vol. 475: North-Holland, pp. 127–135, 2017.
Wu, Y-R., R. Shivaraman, K-C. Wang, and J. S. Speck, "Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure", Applied Physics Letters, vol. 101, no. 8: AIP, pp. 083505, 2012.
Zhang, Y., A. Mauze, and J. S. Speck, "Anisotropic etching of β-Ga2O3 using hot phosphoric acid", Applied Physics Letters, vol. 115, pp. 013501, 2019.
Feneberg, M., C. Lidig, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, Z. Galazka, and R. Goldhahn, "Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift", APL Materials, vol. 7, pp. 022508, 2019.
Darakchieva, V., T. Paskova, M. Schubert, H. Arwin, PP. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, et al., "Anisotropic strain and phonon deformation potentials in GaN", Physical Review B, vol. 75, no. 19: APS, pp. 195217, 2007.
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations, 2014.
Young, E. C., A. E. Romanov, C. S. Gallinat, A. Hirai, G. E. Beltz, and J. S. Speck, "Anisotropy of tensile stresses and cracking in nonbasal plane Al x Ga 1- x N/GaN heterostructures", Applied Physics Letters, vol. 96, no. 4: AIP, pp. 041913, 2010.
Feneberg, M., C. Lidig, K. Lange, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, and R. Goldhahn, "Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 82–86, 2014.
Wong, M. Hoi, U. Singisetti, J. Lu, J. S. Speck, and U. K. Mishra, "Anomalous output conductance in N-polar GaN high electron mobility transistors", IEEE Transactions on Electron Devices, vol. 59, no. 11: IEEE, pp. 2988–2995, 2012.
Wong, M. Hoi, U. Singisetti, J. Lu, J. S. Speck, and U. K. Mishra, "Anomalous output conductance in N-polar GaN-based MIS-HEMTs", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 211–212, 2011.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Anti Reflection (AR) Coating for Indium Gallium Nitride (InGaN) Solar Cells", Army Research Laboratory Report, 08/2012.
Andrews, AM., KL. van Horn, T. Mates, and JS. Speck, "Antimony segregation in the oxidation of AlAsSb interlayers", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 21, no. 6: AVS, pp. 1883–1891, 2003.

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