Publications

Found 40 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, JS and First Letter Of Title is E  [Clear All Filters]
1999
Chien, AT., X. Xu, JH. Kim, J. Sachleben, JS. Speck, and FF. Lange, "Electrical characterization of BaTiO 3 heteroepitaxial thin films by hydrothermal synthesis", Journal of materials research, vol. 14, no. 8: Cambridge University Press, pp. 3330–3339, 1999.
Abare, AC., M. Hansen, JS. Speck, SP. DenBaars, and LA. Coldren, "Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings", Electronics Letters, vol. 35, no. 18: IET, pp. 1559–1560, 1999.
Smorchkova, IP., CR. Elsass, JP. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, SP. DenBaars, JS. Speck, and UK. Mishra, "ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)-Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 86, no. 8: New York, NY: American Institute of Physics, c1937-, pp. 4520–4526, 1999.
Chichibu, SF., H. Marchand, MS. Minsky, S. Keller, PT. Fini, JP. Ibbetson, SB. Fleischer, JS. Speck, JE. Bowers, E. Hu, et al., "Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth", Applied physics letters, vol. 74, no. 10: AIP, pp. 1460–1462, 1999.
Golan, Y., XH. Wu, JS. Speck, RP. Vaudo, and VM. Phanse, "Erratum:ìMorphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphireî[Appl. Phys. Lett. 73, 3090 (1998)]", Applied Physics Letters, vol. 74, no. 10: AIP, pp. 1498–1498, 1999.
Marchand, H., N. Zhang, L. Zhao, Y. Golan, PT. Fini, JP. Ibbetson, S. Keller, SP. DenBaars, JS. Speck, UK. Mishra, et al., "Extended defect reduction in GaN laterally overgrown on Si (111)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 833–836, 1999.
1998
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 37, no. 8R: IOP Publishing, pp. 4460, 1998.
Kozodoy, P., JP. Ibbetson, H. Marchand, PT. Fini, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "Electrical characterization of GaN pn junctions with and without threading dislocations", Applied physics letters, vol. 73, no. 7: AIP, pp. 975–977, 1998.
1997
Derouin, TA., CDE. Lakeman, XH. Wu, JS. Speck, and FF. Lange, "Effect of lattice mismatch on the epitaxy of sol-gel LiNbO 3 thin films", Journal of materials research, vol. 12, no. 5: Cambridge University Press, pp. 1391–1400, 1997.
Schlom, DG., CB. Eom, ME. Hawley, CM. Foster, and JS. Speck, Epitaxial oxide thin films 3. Materials Research Society symposium proceedings Volume 474: Materials Research Society, Warrendale, PA (US), 1997.
Eom, C-B., C. Foster, ME. Hawley, D. Schlom, and JS. Speck, Epitaxial Oxide Thin Films III, vol. 474: Materials Research Society, 1997.
1996
Speck, JS., DK. Fork, RM. Wolf, and T. Shiosaki, Epitaxial oxide thin films 2: Materials Research Society, Pittsburgh, PA (United States), 1996.
1993
Pompe, W., X. Gong, Z. Suo, and JS. Speck, "Elastic energy release due to domain formation in the strained epitaxy of ferroelectric and ferroelastic films", Journal of Applied Physics, vol. 74, no. 10: AIP, pp. 6012–6019, 1993.
Pompe, W., X. Gong, Z. Suo, and JS. Speck, "Energy Release Due to Domain Formation in the Strained Epitaxy of Multivariant Films", MRS Online Proceedings Library Archive, vol. 310: Cambridge University Press, 1993.
1991
de Graef, M., JS. Speck, DR. Clarke, and D. Dimos, "Electron Microscopic Study of Domains in Relaxor Ferroelectrics", MRS Online Proceedings Library Archive, vol. 243: Cambridge University Press, 1991.

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