Publications

Found 2098 results
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1997
Docter, DP., JJ. Brown, M. Hu, M. Matloubian, J. Speck, X. Wu, and DE. Grider, "InzAl1- zAs/InyGa1- yAs lattice constant engineered HEMTs on GaAs", Solid-State Electronics, vol. 41, no. 10: Pergamon, pp. 1629–1634, 1997.
Sung, T., G. Popovici, MA. Prelas, RG. Wilson, SK. Loyalka, T. Lou, G. Fan, B. Ding, Z. Hu, AT. Chien, et al., "JMR Abstracts", MRS BULLETIN, pp. 85, 1997.
DenBaars, SP., P. Kozodoy, S. Keller, MP. Mack, A. Abare, X. Wu, JS. Speck, and UK. Mishra, "MOCVD Growth of Group-III Nitrides for High Quality Photonic Devices", OPTOELECTRONICS & COMMUNICATIONS CONFERENCE, vol. 2, pp. 48–49, 1997.
Srikant, V., JS. Speck, and DR. Clarke, "Mosaic structure in epitaxial thin films having large lattice mismatch", Journal of applied physics, vol. 82, no. 9: AIP, pp. 4286–4295, 1997.
Srikant, V., JS. Speck, and DR. Clarke, "Mosaic structure in epitaxial thin films having large lattice mismatch", Journal of applied physics, vol. 82, no. 9: AIP, pp. 4286–4295, 1997.
Mishra, U. K., P. Parikh, P. Chavarkar, J. Yen, J. Champlain, B. Thibeault, H. Reese, S. Stone Shi, E. Hu, L. Zhu, et al., "Oxide based compound semiconductor electronics", Electron Devices Meeting, 1997. IEDM'97. Technical Digest., International: IEEE, pp. 545–548, 1997.
Eddy, MM., R. Hanson, MR. Rao, B. Zuck, JS. Speck, and EJ. Tarsa, "Oxide epitaxial lift-off (OELO)", MRS Online Proceedings Library Archive, vol. 474: Cambridge University Press, 1997.
Blank, H-R., H. Kroemer, S. Mathis, and JS. Speck, "Structural and electrical properties of low-temperature-grown Al (As, Sb)", Applied physics letters, vol. 71, no. 24: AIP, pp. 3534–3536, 1997.
Golan, Y., P. Fini, S. P. DenBaars, and J. S. Speck, "Substrate Surface Treatments and Controlled Contamination in GaN/Sapphire MOCVD", MRS Online Proceedings Library Archive, vol. 482: Cambridge University Press, 1997.
Beltz, GE., M. Chang, MA. Eardley, W. Pompe, AE. Romanov, and JS. Speck, "A theoretical model for threading dislocation reduction during selective area growth", Materials Science and Engineering: A, vol. 234: Elsevier, pp. 794–797, 1997.
1996
Romanov, AE., W. Pompe, GE. Beltz, and JS. Speck, "An approach to threading dislocation ëëreaction kineticsíí", Applied physics letters, vol. 69, no. 22: AIP, pp. 3342–3344, 1996.
Sink, RK., S. Keller, BP. Keller, DI. Babić, AL. Holmes, D. Kapolnek, XH. Wu, JS. Speck, SP. DenBaars, and JE. Bowers, "Cleaved facets in GaN by wafer fusion of GaN to InP", MRS Online Proceedings Library Archive, vol. 421: Cambridge University Press, 1996.
Sink, RK., S. Keller, BP. Keller, DI. Babić, AL. Holmes, D. Kapolnek, XH. Wu, JS. Speck, SP. DenBaars, and JE. Bowers, "Cleaved facets in GaN by wafer fusion of GaN to InP", MRS Online Proceedings Library Archive, vol. 421: Cambridge University Press, 1996.
Sink, RK., S. Keller, BP. Keller, D. I. Babić, AL. Holmes, D. Kapolnek, SP. DenBaars, JE. Bowers, XH. Wu, and JS. Speck, "Cleaved GaN facets by wafer fusion of GaN to InP", Applied physics letters, vol. 68, no. 15: AIP, pp. 2147–2149, 1996.
Sink, RK., S. Keller, BP. Keller, D. I. Babić, AL. Holmes, D. Kapolnek, SP. DenBaars, JE. Bowers, XH. Wu, and JS. Speck, "Cleaved GaN facets by wafer fusion of GaN to InP", Applied physics letters, vol. 68, no. 15: AIP, pp. 2147–2149, 1996.
Zaremba, C. M., A. M. Belcher, M. Fritz, Y. Li, S. Mann, P. K. Hansma, D. E. Morse, J. S. Speck, and G. D. Stucky, "Critical transitions in the biofabrication of abalone shells and flat pearls", Chemistry of Materials, vol. 8, no. 3: American Chemical Society, pp. 679–690, 1996.
Zaremba, C. M., A. M. Belcher, M. Fritz, Y. Li, S. Mann, P. K. Hansma, D. E. Morse, J. S. Speck, and G. D. Stucky, "Critical transitions in the biofabrication of abalone shells and flat pearls", Chemistry of Materials, vol. 8, no. 3: American Chemical Society, pp. 679–690, 1996.
Allemann, JA., Y. Xia, RE. Morriss, AP. Wilkinson, H. Eckert, JS. Speck, CG. Levi, FF. Lange, and S. Anderson, "Crystallization behavior of Li 1–5x Ta 1+ x O 3 glasses synthesized from liquid precursors", Journal of materials research, vol. 11, no. 9: Cambridge University Press, pp. 2376–2387, 1996.
Wu, XH., LM. Brown, D. Kapolnek, S. Keller, B. Keller, SP. DenBaars, and JS. Speck, "Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3", Journal of applied physics, vol. 80, no. 6: AIP, pp. 3228–3237, 1996.
Wu, X. H., L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. DenBaars, and J. Speck, "Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3", Journal of Applied Physics, vol. 80, pp. 3228 - 3237, 10, 1996.
Keller, S., D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. DenBaars, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
Speck, JS., DK. Fork, RM. Wolf, and T. Shiosaki, Epitaxial oxide thin films 2: Materials Research Society, Pittsburgh, PA (United States), 1996.
Speck, JS., DK. Fork, RM. Wolf, and T. Shiosaki, Epitaxial oxide thin films 2: Materials Research Society, Pittsburgh, PA (United States), 1996.
Speck, J. S., Epitaxial Oxide Thin Films II: Symposium Held November 26-30, 1995, Boston, Massachusetts, USA: Materials Research Society, 1996.
Tarsa, EJ., EA. Hachfeld, FT. Quinlan, JS. Speck, and M. Eddy, "Growth-related stress and surface morphology in homoepitaxial SrTiO3 films", Applied physics letters, vol. 68, no. 4: AIP, pp. 490–492, 1996.

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