Publications

Found 384 results
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2000
Lee, H., JA. Johnson, JS. Speck, and PM. Petroff, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Quantum Dots and Self-Assembled Interface Structures-Controlled ordering and positioning of InAs", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2193–2196, 2000.
Elhamri, S., A. Saxler, D. Cull, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, C. Poblenz, P. Fini, S. Keller, et al., "Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure", MRS Online Proceedings Library Archive, vol. 639: Cambridge University Press, 2000.
Petroff, PM., W. Schoenfeld, C. Metzner, B. Gerardot, H. Lee, J. Johnson, and J. Speck, "Self-assembled quantum dot lattices and spectroscopy of single quantum dot molecules.", ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 220: AMER CHEMICAL SOC 1155 16TH ST, NW, WASHINGTON, DC 20036 USA, pp. U233–U233, 2000.
1999
Vetury, R., H. Marchand, G. Parish, PT. Fini, JP. Ibbetson, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "Chapter 5: Field Effect Transistors (FETs and HEMTs)-First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)", Institute of Physics Conference Series, vol. 162: Bristol [England]; Boston: Adam Hilger, Ltd., c1985-, pp. 177–184, 1999.
Romanov, AE., A. Vojta, W. Pompe, MJ. Lefevre, and JS. Speck, "Domain patterns in (111) oriented tetragonal ferroelectric films", physica status solidi (a), vol. 172, no. 1: WILEY-VCH Verlag Berlin, pp. 225–253, 1999.
Golan, Y., XH. Wu, JS. Speck, RP. Vaudo, and VM. Phanse, "Erratum:ìMorphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphireî[Appl. Phys. Lett. 73, 3090 (1998)]", Applied Physics Letters, vol. 74, no. 10: AIP, pp. 1498–1498, 1999.
Nagra, A. S., T. R. Taylor, P. Periaswamy, J. Speck, and R. A. York, "First demonstration of a periodically loaded line phase shifter using BST capacitors", MRS Online Proceedings Library Archive, vol. 603: Cambridge University Press, 1999.
Vetury, R., H. Marchand, G. Parish, PT. Fini, JP. Ibbetson, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 177–184, 1999.
Elsass, C. R., Y. Smorchkova, E. Haus, P. Fini, P. Petroff, S. P. DenBaars, U. Mishra, J. Speck, and B. Heying, "High electron mobility 2DEG in AlGaN/GaN structures", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1028–1029, 1999.
Elsass, CR., IP. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, JP. Ibbetson, S. Keller, PM. Petroff, SP. DenBaars, et al., "High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 74, no. 23: AIP, pp. 3528–3530, 1999.
Romanov, AE., PM. Petroff, and JS. Speck, "Lateral ordering of quantum dots by periodic subsurface stressors", Applied physics letters, vol. 74, no. 16: AIP, pp. 2280–2282, 1999.
Padmini, P., TR. Taylor, MJ. Lefevre, AS. Nagra, RA. York, and JS. Speck, "Realization of high tunability barium strontium titanate thin films by rf magnetron sputtering", Applied Physics Letters, vol. 75, no. 20: AIP, pp. 3186–3188, 1999.
Romanov, AE., W. Pompe, S. Mathis, GE. Beltz, and JS. Speck, "Threading dislocation reduction in strained layers", Journal of applied physics, vol. 85, no. 1: AIP, pp. 182–192, 1999.
1998
Golan, Y., XH. Wu, JS. Speck, RP. Vaudo, and VM. Phanse, "CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES-Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire", Applied Physics Letters, vol. 73, no. 21: New York [etc.] American Institute of Physics., pp. 3090–3092, 1998.
Speck, JS., W. Pomp, AE. Romanov, and CM. Foster, "Domain pattern formation in epitaxial ferroelectric films", Integrated Ferroelectrics, vol. 20, no. 1-4: Taylor & Francis, pp. 67–68, 1998.
Romanov, AE., MJ. Lefevre, JS. Speck, W. Pompe, SK. Streiffer, and CM. Foster, "Domain pattern formation in epitaxial rhombohedral ferroelectric films. II. Interfacial defects and energetics", Journal of applied physics, vol. 83, no. 5: AIP, pp. 2754–2765, 1998.
Streiffer, SK., CB. Parker, AE. Romanov, MJ. Lefevre, L. Zhao, JS. Speck, W. Pompe, CM. Foster, and GR. Bai, "Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments", Journal of applied physics, vol. 83, no. 5: AIP, pp. 2742–2753, 1998.
Streiffer, SK., CB. Parker, AE. Romanov, MJ. Lefevre, L. Zhao, JS. Speck, W. Pompe, CM. Foster, and GR. Bai, "Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments", Journal of applied physics, vol. 83, no. 5: AIP, pp. 2742–2753, 1998.
Golan, Y., XH. Wu, JS. Speck, RP. Vaudo, and VM. Phanse, "Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire", Applied physics letters, vol. 73, no. 21: AIP, pp. 3090–3092, 1998.
Wu, XH., CR. Elsass, A. Abare, M. Mack, S. Keller, PM. Petroff, SP. DenBaars, JS. Speck, and SJ. Rosner, "Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells", Applied Physics Letters, vol. 72, no. 6: AIP, pp. 692–694, 1998.
1997
Beltz, GE., M. Chang, JS. Speck, W. Pompe, and AE. Romanov, "Computer simulation of threading dislocation density reduction in heteroepitaxial layers", Philosophical Magazine A, vol. 76, no. 4: Taylor & Francis, pp. 807–835, 1997.
Sung, T., G. Popovici, MA. Prelas, RG. Wilson, SK. Loyalka, T. Lou, G. Fan, B. Ding, Z. Hu, AT. Chien, et al., "JMR Abstracts", MRS BULLETIN, pp. 85, 1997.
Sung, T., G. Popovici, MA. Prelas, RG. Wilson, SK. Loyalka, T. Lou, G. Fan, B. Ding, Z. Hu, AT. Chien, et al., "JMR Abstracts", MRS BULLETIN, pp. 85, 1997.
Mishra, U. K., P. Parikh, P. Chavarkar, J. Yen, J. Champlain, B. Thibeault, H. Reese, S. Stone Shi, E. Hu, L. Zhu, et al., "Oxide based compound semiconductor electronics", Electron Devices Meeting, 1997. IEDM'97. Technical Digest., International: IEEE, pp. 545–548, 1997.
Beltz, GE., M. Chang, MA. Eardley, W. Pompe, AE. Romanov, and JS. Speck, "A theoretical model for threading dislocation reduction during selective area growth", Materials Science and Engineering: A, vol. 234: Elsevier, pp. 794–797, 1997.

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