Publications

Found 645 results
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2008
Wraback, M., GA. Garrett, GD. Metcalfe, H. Shen, MC. Schmidt, A. Hirai, JS. Speck, SP. DenBaars, and S. Nakamura, Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications: DTIC Document, 2008.
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Non-polar-oriented InGaN light-emitting diodes for liquid-crystal-display backlighting", Journal of the Society for Information Display, vol. 16, no. 4: Wiley Online Library, pp. 571–578, 2008.
Masui, H., H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope", physica status solidi (a), vol. 205, no. 5: Wiley Online Library, pp. 1203–1206, 2008.
Zhong, H., A. Tyagi, JS. Speck, and S. Nakamura, "Piezoelectric Field in Semi-Polar InGaN/GaN Quantum Wells H. Shen, GA Garrett, and M. Wraback US Army Research Laboratory 2800 Powder Mill Road, Adelphi, MD 20783", Phys. Lett, vol. 92, pp. 221110, 2008.
Saito, M., D. S. Kamber, T. J. Baker, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Plane Dependent Growth of GaN in Supercritical Basic Ammonia", Applied physics express, vol. 1, no. 12: IOP Publishing, pp. 121103, 2008.
Nakamura, S., U. Mishra, S. DenBaars, J. S. Speck, M. Wraback, Y. Arakawa, A. Allerman, N. Grandjean, J. Shealy, M. Krames, et al., "Preface: phys. stat. sol.(c) 5/6", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1472–1474, 2008.
Hashimoto, T., F. Wu, M. Saito, K. Fujito, J. S. Speck, and S. Nakamura, "Status and perspectives of the ammonothermal growth of GaN substrates", Journal of Crystal Growth, vol. 310, no. 5: Elsevier, pp. 876–880, 2008.
Tyagi, A., Y-. Da Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Stimulated emission at blue-green (480 nm) and green (514 nm) wavelengths from nonpolar (m-plane) and semipolar (1122) InGaN multiple quantum well laser diode structures", Applied physics express, vol. 1, no. 9: IOP Publishing, pp. 091103, 2008.
Nidhi, S. Rajan, S. Keller, F. Wu, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Study of interface barrier of SiN x/GaN interface for nitrogen-polar GaN based high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 12: AIP, pp. 124508, 2008.
Garrett, G. A., H. Shen, M. Wraback, A. Tyagi, M. C. Schmidt, Z. Jia, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Time-resolved optical studies of InGaN LED structures grown on semipolar and nonpolar bulk GaN substrates", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CMAA1, 2008.
Barabash, RI., G. E. Ice, BA. Haskell, S. Nakamura, JS. Speck, and W. Liu, "White X-ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 899–902, 2008.
2009
Da Lin, Y-., A. Chakraborty, S. Brinkley, H. Chih Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Characterization of blue-green m-plane InGaN light emitting diodes", Applied Physics Letters, vol. 94, no. 26: AIP, pp. 261108, 2009.
Garrett, G. A., H. Shen, M. Wraback, A. Tyagi, M. C. Schmidt, J. S. Speck, S. P. DenBaars, and S. Nakamaura, "Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides", Applied physics express, vol. 2, no. 2: IOP Publishing, pp. 021002, 2009.
Shen, H., M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Determination of polarization field in a semipolar (11 2\= 2) In Ga/ Ga N single quantum well using Franz–Keldysh oscillations in electroreflectance", Applied Physics Letters, vol. 94, no. 24: AIP, pp. 241906, 2009.
Bierwagen, O., T. Nagata, T. Ive, CG. Van de Walle, and JS. Speck, "Dissipation-factor-based criterion for the validity of carrier-type identification by capacitance-voltage measurements", Applied Physics Letters, vol. 94, no. 15: AIP, pp. 152110, 2009.
Letts, E. R., J. S. Speck, and S. Nakamura, "Effect of indium on the physical vapor transport growth of AlN", Journal of Crystal Growth, vol. 311, no. 4: Elsevier, pp. 1060–1064, 2009.
Zhong, H., A. Tyagi, N. Pfaff, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Enhancing the light extraction efficiency of blue semipolar (1011) nitride-based light emitting diodes through surface patterning", Japanese Journal of Applied Physics, vol. 48, no. 3R: IOP Publishing, pp. 030201, 2009.
Saito, M., H. Yamada, K. Iso, H. Sato, H. Hirasawa, D. S. Kamber, T. Hashimoto, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Evaluation of GaN substrates grown in supercritical basic ammonia", Applied Physics Letters, vol. 94, no. 5: AIP, pp. 052109, 2009.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition, 2009.
D'evelyn, M. P., J. S. Speck, M. T. Coulter, and S. Nakamura, Heater device and method for high pressure processing of crystalline materials, 2009.
Navarro, A., C. Rivera, J. Pereiro, E. Munoz, B. Imer, SP. DenBaars, and JS. Speck, "High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications", Applied Physics Letters, vol. 94, no. 21: AIP, pp. 213512, 2009.
Newman, S. A., D. S. Kamber, T. J. Baker, Y. Wu, F. Wu, Z. Chen, S. Namakura, J. S. Speck, and S. P. DenBaars, "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy", Applied Physics Letters, vol. 94, no. 12: AIP, pp. 121906, 2009.
Newman, S. A., D. S. Kamber, T. J. Baker, Y. Wu, F. Wu, Z. Chen, S. Namakura, J. S. Speck, and S. P. DenBaars, "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy", Applied Physics Letters, vol. 94, no. 12: AIP, pp. 121906, 2009.
Akasaki, I., T. Nishinaga, B. Monemar, Y. Nanishi, A. Yoshikawa, K. Kishino, H. Amano, K. Hiramatsu, N. Shibata, H. Asahi, et al., "List of Committee Members", Journal of Crystal Growth, vol. 311, pp. 2760, 2009.

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