Publications

Found 522 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Last Name is C  [Clear All Filters]
2006
Recht, F., L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation", Info: Postprints, UC Santa Barbara, 2006.
Recht, F., L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation", Info: Postprints, UC Santa Barbara, 2006.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, 2006.
Chakraborty, A., B. A. Haskell, H. Masui, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 739, 2006.
Koblmüller, G., CS. Gallinat, S. Bernardis, JS. Speck, GD. Chern, ED. Readinger, H. Shen, and M. Wraback, "Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy", Applied physics letters, vol. 89, no. 7: AIP, pp. 071902, 2006.
Chichibu, S. F., A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, et al., "Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors", Nature materials, vol. 5, no. 10: Nature Publishing Group, pp. 810, 2006.
Chichibu, S. F., A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, et al., "Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors", Nature materials, vol. 5, no. 10: Nature Publishing Group, pp. 810, 2006.
Shu, CS., A. Chini, Y. Fu, C. Poblenz, JS. Speck, and UK. Mishra, "P-gan/algan/gan enhancement-mode hemts", 64th Device Research Conference (DRC), pp. 163–164, 2006.
Koyama, T., T. Onuma, H. Masui, A. Chakraborty, BA. Haskell, S. Keller, UK. Mishra, JS. Speck, S. Nakamura, SP. DenBaars, et al., "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In x Ga 1- x N/ Ga N blue light emitting diodes fabricated on freestanding GaN substrates", Applied physics letters, vol. 89, no. 9: AIP, pp. 091906, 2006.
Armstrong, A., A. Chakraborty, JS. Speck, SP. DenBaars, UK. Mishra, and SA. Ringel, "Quantitative observation and discrimination of AlGaN-and GaN-related deep levels in Al Ga N/ Ga N heterostructures using capacitance deep level optical spectroscopy", Applied physics letters, vol. 89, no. 26: AIP, pp. 262116, 2006.
Onuma, T., S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, UK. Mishra, T. Sota, and SF. Chichibu, "Recombination dynamics of a 268 nm emission peak in Al 0.53 In 0.11 Ga 0.36 N/ Al 0.58 In 0.02 Ga 0.40 N multiple quantum wells", Applied Physics Letters, vol. 88, no. 11: AIP, pp. 111912, 2006.
Corrion, A., C. Poblenz, P. Waltereit, T. Palacios, S. Rajan, U. K. Mishra, and J. S. Speck, "Review of recent developments in growth of AlGaN/GaN high-electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy", IEICE transactions on electronics, vol. 89, no. 7: The Institute of Electronics, Information and Communication Engineers, pp. 906–912, 2006.
Corrion, A., C. Poblenz, P. Waltereit, T. Palacios, S. Rajan, U. K. Mishra, and J. S. Speck, "Special Section on Heterostructure Microelectronics with TWHM2005-GaN-Based Devices-Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by", IEICE Transactions on Electronics, vol. 89, no. 7: Tokyo, Japan: Institute of Electronics, Information and Communication Engineers, c1992-, pp. 906–912, 2006.
Imer, B., F. Wu, M. D. Craven, J. S. Speck, and S. P. DenBaars, "Stability of (1100) m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8644, 2006.
Chakraborty, A., K. Choong Kim, F. Wu, B. A. Haskell, S. Keller, J. S. Speck, S. Nakamura, S. P. DenBaars, and U. K. Mishra, "Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-Plane GaN", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8659, 2006.
Shen, L., T. Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment", IEEE Electron Device Letters, vol. 27, no. 4: IEEE, pp. 214–216, 2006.
Shen, L., T. Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment", IEEE Electron Device Letters, vol. 27, no. 4: IEEE, pp. 214–216, 2006.
2005
Rajan, S., A. Chini, M. Wong, Y. Fu, F. Wu, JS. Speck, UK. Mishra, M. J. Grundmann, and C. Suh, Advanced Transistor Structures Based on N-face GaN , 2005.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates", Japanese journal of applied physics, vol. 44, no. 1L: IOP Publishing, pp. L173, 2005.
Craven, M. D., S. P. DenBaars, and J. Stephen Speck, Dislocation reduction in non-polar gallium nitride thin films, 2005.
Poblenz, C., P. Waltereit, S. Rajan, UK. Mishra, JS. Speck, P. Chin, I. Smorchkova, and B. Heying, "Effect of AlN nucleation layer growth conditions on buffer leakage in Al Ga N/ Ga N high electron mobility transistors grown by molecular beam epitaxy (MBE)", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 4: AVS, pp. 1562–1567, 2005.
Chini, A., S. Rajan, M. Wong, Y. Fu, JS. Speck, and UK. Mishra, "Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs", Device Research Conference Digest, 2005. DRC'05. 63rd, vol. 1: IEEE, pp. 63–64, 2005.
Chakraborty, A., "Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (10 1 1) GaN templates", MRS Online Proceedings Library Archive, vol. 892: Cambridge University Press, 2005.
Palacios, T., A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "High-power AlGaN/GaN HEMTs for Ka-band applications", IEEE Electron Device Letters, vol. 26, no. 11: IEEE, pp. 781–783, 2005.
López-Richard, V., AM. Alcalde, SJ. Prado, GE. Marques, B. T. Langdon, Y. Paltiel, N. Snapi, A. Zussman, C. Mar Blanca, V. Julius Cemine, et al., "LASERS, OPTICS, AND OPTOELECTRONICS", Appl. Phys. Lett, vol. 87, no. 23, pp. 234101, 2005.

Pages