Publications

Found 2098 results
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1997
Docter, DP., JJ. Brown, M. Hu, M. Matloubian, J. Speck, X. Wu, and DE. Grider, "InzAl1- zAs/InyGa1- yAs lattice constant engineered HEMTs on GaAs", Solid-State Electronics, vol. 41, no. 10: Pergamon, pp. 1629–1634, 1997.
Sung, T., G. Popovici, MA. Prelas, RG. Wilson, SK. Loyalka, T. Lou, G. Fan, B. Ding, Z. Hu, AT. Chien, et al., "JMR Abstracts", MRS BULLETIN, pp. 85, 1997.
DenBaars, SP., P. Kozodoy, S. Keller, MP. Mack, A. Abare, X. Wu, JS. Speck, and UK. Mishra, "MOCVD Growth of Group-III Nitrides for High Quality Photonic Devices", OPTOELECTRONICS & COMMUNICATIONS CONFERENCE, vol. 2, pp. 48–49, 1997.
Srikant, V., JS. Speck, and DR. Clarke, "Mosaic structure in epitaxial thin films having large lattice mismatch", Journal of applied physics, vol. 82, no. 9: AIP, pp. 4286–4295, 1997.
Srikant, V., JS. Speck, and DR. Clarke, "Mosaic structure in epitaxial thin films having large lattice mismatch", Journal of applied physics, vol. 82, no. 9: AIP, pp. 4286–4295, 1997.
Mishra, U. K., P. Parikh, P. Chavarkar, J. Yen, J. Champlain, B. Thibeault, H. Reese, S. Stone Shi, E. Hu, L. Zhu, et al., "Oxide based compound semiconductor electronics", Electron Devices Meeting, 1997. IEDM'97. Technical Digest., International: IEEE, pp. 545–548, 1997.
Eddy, MM., R. Hanson, MR. Rao, B. Zuck, JS. Speck, and EJ. Tarsa, "Oxide epitaxial lift-off (OELO)", MRS Online Proceedings Library Archive, vol. 474: Cambridge University Press, 1997.
Blank, H-R., H. Kroemer, S. Mathis, and JS. Speck, "Structural and electrical properties of low-temperature-grown Al (As, Sb)", Applied physics letters, vol. 71, no. 24: AIP, pp. 3534–3536, 1997.
Golan, Y., P. Fini, S. P. DenBaars, and J. S. Speck, "Substrate Surface Treatments and Controlled Contamination in GaN/Sapphire MOCVD", MRS Online Proceedings Library Archive, vol. 482: Cambridge University Press, 1997.
Beltz, GE., M. Chang, MA. Eardley, W. Pompe, AE. Romanov, and JS. Speck, "A theoretical model for threading dislocation reduction during selective area growth", Materials Science and Engineering: A, vol. 234: Elsevier, pp. 794–797, 1997.
1998
Marchand, H., JP. Ibbetson, P. T. Fini, P. Kozodoy, S. Keller, S. DenBaars, JS. Speck, and UK. Mishra, "Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 3: Cambridge University Press, 1998.
DenBaars, SP., AC. Abare, MP. Mack, M. Hansen, RK. Sink, P. Kozodoy, S. Keller, JS. Speck, JE. Bowers, UK. Mishra, et al., "Blue InGaN MQW laser diodes on sapphire", Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS'98. IEEE, vol. 2: IEEE, pp. 346–347, 1998.
DenBaars, SP., AC. Abare, MP. Mack, M. Hansen, RK. Sink, P. Kozodoy, S. Keller, JS. Speck, JE. Bowers, UK. Mishra, et al., "Blue InGaN MQW laser diodes on sapphire", Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS'98. IEEE, vol. 2: IEEE, pp. 346–347, 1998.
Abare, AC., MP. Mack, M. Hansen, RK. Sink, P. Kozodoy, S. Keller, JS. Speck, JE. Bowers, UK. Mishra, LA. Coldren, et al., "Cleaved and etched facet nitride laser diodes", IEEE Journal of selected topics in quantum electronics, vol. 4, no. 3: IEEE, pp. 505–509, 1998.
Abare, AC., MP. Mack, M. Hansen, RK. Sink, P. Kozodoy, S. Keller, JS. Speck, JE. Bowers, UK. Mishra, LA. Coldren, et al., "Cleaved and etched facet nitride laser diodes", IEEE Journal of selected topics in quantum electronics, vol. 4, no. 3: IEEE, pp. 505–509, 1998.
Marchand, H., XH. Wu, JP. Ibbetson, PT. Fini, P. Kozodoy, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES-Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 73, no. 6: New York [etc.] American Institute of Physics., pp. 747–749, 1998.
Golan, Y., XH. Wu, JS. Speck, RP. Vaudo, and VM. Phanse, "CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES-Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire", Applied Physics Letters, vol. 73, no. 21: New York [etc.] American Institute of Physics., pp. 3090–3092, 1998.
Thompson, C., A. Munkholm, GB. Stephenson, JA. Eastman, O. Auciello, CM. Foster, P. Fini, SP. DenBaars, and JS. Speck, "Cubic and Hexagonal Fractions in GaN Nucleation Layers Measured Using Grazing Incidence X-Ray Scattering", APS March Meeting Abstracts, 1998.
Thompson, C., A. Munkholm, GB. Stephenson, JA. Eastman, O. Auciello, CM. Foster, P. Fini, SP. DenBaars, and JS. Speck, "Cubic and Hexagonal Fractions in GaN Nucleation Layers Measured Using Grazing Incidence X-Ray Scattering", APS March Meeting Abstracts, 1998.
Munkholm, A., C. Thompson, CM. Foster, JA. Eastman, O. Auciello, GB. Stephenson, P. Fini, SP. DenBaars, and JS. Speck, "Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering", Applied physics letters, vol. 72, no. 23: AIP, pp. 2972–2974, 1998.
Munkholm, A., C. Thompson, CM. Foster, JA. Eastman, O. Auciello, GB. Stephenson, P. Fini, SP. DenBaars, and JS. Speck, "Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering", Applied physics letters, vol. 72, no. 23: AIP, pp. 2972–2974, 1998.
Wu, XH., P. Fini, EJ. Tarsa, B. Heying, S. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Dislocation generation in GaN heteroepitaxy", Journal of Crystal Growth, vol. 189: North-Holland, pp. 231–243, 1998.
Speck, JS., W. Pomp, AE. Romanov, and CM. Foster, "Domain pattern formation in epitaxial ferroelectric films", Integrated Ferroelectrics, vol. 20, no. 1-4: Taylor & Francis, pp. 67–68, 1998.
Romanov, AE., MJ. Lefevre, JS. Speck, W. Pompe, SK. Streiffer, and CM. Foster, "Domain pattern formation in epitaxial rhombohedral ferroelectric films. II. Interfacial defects and energetics", Journal of applied physics, vol. 83, no. 5: AIP, pp. 2754–2765, 1998.
Romanov, AE., MJ. Lefevre, JS. Speck, W. Pompe, SK. Streiffer, and CM. Foster, "Domain pattern formation in epitaxial rhombohedral ferroelectric films. II. Interfacial defects and energetics", Journal of applied physics, vol. 83, no. 5: AIP, pp. 2754–2765, 1998.

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