@article {2416,
	title = {Energy-resolved EBSD using a monolithic direct electron detector},
	year = {2025},
	abstract = {<p>
	Accurate quantification of the energy distribution of backscattered electrons (BSEs) contributing to electron backscatter diffraction (EBSD) patterns remains as an active challenge. This study introduces an energy-resolved EBSD methodology based on a monolithic active pixel sensor direct electron detector and an electron-counting algorithm to enable the energy quantification of individual BSEs, providing direct measurements of electron energy spectra within diffraction patterns. Following detector calibration of the detector signal as a function of primary beam energy, measurements using a 12 keV primary beam on Si(100) reveal a broad BSE energy distribution across the diffraction pattern, extending down to 3 keV. Furthermore, an angular dependence in the weighted average BSE energy is observed, closely matching predictions from Monte Carlo simulations. Pixel-resolved energy maps reveal subtle modulations at Kikuchi band edges, offering insights into the backscattering process. By applying energy filtering within spectral windows as narrow as 2 keV centered on the primary beam energy, significant enhancement in pattern clarity and high-frequency detail is observed. Notably, electrons in the 2\&ndash;8 keV range, despite having undergone substantial energy loss (\&Delta;E = 4\&ndash;10 keV), still produce Kikuchi patterns. By enabling energy determination at the single-electron level, this approach introduces a versatile tool-set for expanding the quantitative capabilities of EBSD, thereby offering the potential to deepen the understanding of diffraction contrast mechanisms and to advance the precision of crystallographic measurements.
</p>
},
	author = {Della Ventura, Nicol{\`o} M and Moore, Kalani and Echlin, McLean P and Begley, Matthew R and Pollock, Tresa M and De Graef, Marc and Gianola, Daniel S}
}
@article {1686,
	title = {Electron backscattered diffraction using a new monolithic direct detector: High resolution and fast acquisition},
	journal = {Ultramicroscopy},
	volume = {220},
	year = {2021},
	pages = {113160},
	abstract = {<p>
	A monolithic active pixel sensor based direct detector that is optimized for the primary beam energies in scanning electron microscopes is implemented for electron back-scattered diffraction (EBSD) applications. The high detection efficiency of the detector and its large array of pixels allow sensitive and accurate detection of Kikuchi bands arising from primary electron beam excitation energies of 4 keV to 28 keV, with the optimal contrast occurring in the range of 8\&ndash;16 keV. The diffraction pattern acquisition speed is substantially improved via a sparse sampling mode, resulting from the acquisition of a reduced number of pixels on the detector. Standard inpainting algorithms are implemented to effectively estimate the information in the skipped regions in the acquired diffraction pattern. For EBSD mapping, an acquisition speed as high as 5988 scan points per second is demonstrated, with a tolerable fraction of indexed points and accuracy. The collective capabilities spanning from high angular resolution EBSD patterns to high speed pattern acquisition are achieved on the same detector, facilitating simultaneous detection modalities that enable a multitude of advanced EBSD applications, including lattice strain mapping, structural refinement, low-dose characterization, 3D-EBSD and dynamic in situ EBSD.
</p>
},
	keywords = {Direct detection, EBSD, Indexing, Inpainting, SEM, Sparse sampling},
	issn = {18792723},
	doi = {10.1016/j.ultramic.2020.113160},
	url = {https://doi.org/10.1016/j.ultramic.2020.113160},
	author = {Wang, Fulin and Echlin, Mclean P. and Taylor, Aidan A. and Shin, Jungho and Bammes, Benjamin and Levin, Barnaby D.A. and De Graef, Marc and Pollock, Tresa M. and Gianola, Daniel S.}
}
